128Mb: x16 Mobile SDRAM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed in Table 9 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Table 9:
Absolute Maximum Ratings
Parameter
Voltage on V DD /V DD Q supply relative to V SS
Voltage on inputs, NC or I/O pins relative to V SS
Storage temperature (plastic)
Symbol
V DD /V DD Q
V IN
T STG
Min
–0.35
–0.35
–55
Max
+2.8
+2.8
+150
Units
V
V
°C
Table 10:
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 42; V DD = V DD Q = 1.7–1.95V
Parameter/Condition
Symbol
Min
Max
Units
Notes
Supply voltage
I/O supply voltage
V DD
V DD Q
1.7 1.95
1.7 1.95
V
V
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage: All inputs
Output low voltage: All inputs
V IH
V IL
V OH
V OL
0.8 × V DD Q V DD + 0.3
–0.3 +0.3
0.9 x V DD Q –
– 0.2
V
V
V
V
22
22
Operating temperature:
Commercial
Industrial
T A
0
–40
+70
+85
°C
Input leakage current:
I I
–1.0
1.0
μA
Any input 0V ≤ V IN ≤ V DD (All other pins not under test = 0V)
Output leakage current: DQ disabled; 0V ≤ V OUT ≤ V DD Q
I OZ
–1.5
1.5
μA
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
38
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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